SiC technology – current trends, performance and challenges

Silicon Carbide technology has progressed tremendously over the last couple of years. Consequently, SiC MOSFETs gradually found their way in a variety of applications such as e-mobility, renewable energy conversion or rail traction. After a short introduction, this course will review the current trends in SiC MOSFETs design and will attempt to assess some of the remaining challenges facing the wider adoption of SiC technology. The performance of SiC MOSFETs under dynamic conditions will also be reviewed. A brief review of SiC bipolar technology, namely SiC IGBTs, will also be provided.

Andrei Mihaila

Andrei Mihaila received his PhD from University of Cambridge, Department of Engineering in 2002. Between 2010 and 2023 he was a Principal Scientist with ABB Corporate Research Center and then Hitachi Energy Semiconductors, leading the research and development of SiC technology for next generation of semiconductors with applications in HVDC, high voltage drives, rail traction converters, renewable energy conversion and e-mobility. He has published more than 75 papers in journals and international conferences and is the inventor of more than 25 patents. Together with a team of co-workers, he received the best poster award at ISPSD 2020 and the best paper award at PCIM Asia 2021. In 2022, he received the Semikron Innovation Award in recognition of innovation regarding ‘High-k SiC Power MOSFETs for the Next Generation of E-mobility Power Modules’ (shared with the SiC R&D group). Currently he is a Director for SiC R&D technology at StarPower Europe.