Committee Members

Organising Committee

General Chair

Nando Kaminski, University of Bremen, Germany

Technical Program Committee Chair

Ulrike Grossner, ETH Zurich, Switzerland

Past General Chair

Kevin Chen, Hong Kong University of Science and Technology, Hong Kong

Past Technical Program Committee Chair

Tom Tsai, TSMC, Taiwan

Vice General Chair

Ichiro Omura, Kyushu Institute of Technology, Japan

Vice Technical Program Committee Chair

Yuichi Onozawa, Fuji Electric, Japan

Short Course Chair

Florin Udrea, University of Cambridge, UK

Conference Arrangement Chair

Pavla Hlinkova, GUARANT International, Czech Republic

Advisory Committee

Gehan Amaratunga, Cambridge University, UK
Kevin Chen, Hong Kong University of Science and Technology, Hong Kong
Tat-Sing Paul Chow, Rensselaer Polytechnic Institute, USA
Mohamed Darwish, MaxPower Semiconductor, USA
Don Disney, Infineon Technologies, USA
Oliver Häberlen, Infineon Technologies, Austria
Kimimori Hamada, Huawei Technologies, Japan
Dan Kinzer, Navitas Semiconductor, USA
Leo Lorenz, ECPE, Germany
Gourab Majumdar, Mitsubishi Electric, Japan
Peter Moens, ON Semiconductor, Belgium
Mutsuhiro Mori, Waseda University, Japan
Wai Tung Ng, University of Toronto, Canada
Hiromichi Ohashi, NPERC-J, Japan
Yasukazu Seki, Fuji Electric Co., Ltd., Japan
John Shen, Simon Fraser University, Canada
Kuang Sheng, Zhejiang University, China
M. Ayman Shibib, Vishay Siliconix, USA
Johnny Sin, Hong Kong University of Science and Technology, Hong Kong
Jan Šonský, InnoScience, Belgium
Yoshitaka Sugawara, SiC Power Electronics Network (SPEN), Japan
Richard K. Williams, Adventive Technology, USA

Technical Program Committee

High Voltage Power Devices (HV)

Tanya Trajković, CAM MuTronics, UK – Subcommittee Chair

Fred Fu, Xiinergy Systems, Inc., Canada
Umamaheswara Vemulapati, Hitachi Energy, Switzerland
Ayanori Gatto, Mitsubishi Electric Corporation, Japan
Noriyuki Iwamuro, University of Tsukuba, Japan
Wentao Yang, Huawei, China
Craig Fisher, MaxPower Semiconductor, UK
Ming Qiao, University of Electronic Science and Technology of China, China
Kota Oi, Fuji Electric, Japan

Low Voltage Devices and Power IC Technology (LVT)

Tatsuya Nishiwaki, Toshiba Electronic Devices & Storage Corporation, Japan – Subcommittee Chair

Raffaela Roggero, STMicroelectronics, Italy
Jaehyun Yoo, Samsung Electronics, Korea
Wesley Chih-Wei Hsu, Nexperia, UK
Kwangyoung Ko, DB HiTek, Korea
Tanuj Saxena, ON Semiconductor, USA
Kuo-Ming Wu, TSMC, Taiwan
Atsushi Sakai, Renesas Electronics Corp., Japan
Xin Lin, NXP Semiconductors, USA

Power IC Design (ICD)

John Pigott, NXP Semiconductors, USA – Subcommittee Chair

Bruno Allard, INSA (+ Ampere Lab), Lyon, France
Laurent Chevalier, STMicroelectronics, France
Xin Ming, University of Electronic Science and Technology of China, China
Weijia Zhang, Analog Devices, Canada
Karthik Jayaraman, Renesas Electronics Corp., USA
Makoto Takamiya, The University of Tokyo, Japan
Leon Wang, Omnivision Semiconductor, China

GaN and III/V Compound Materials (GaN)

Tom Tsai, TSMC, Taiwan – Subcommittee Chair

Oliver Hilt, Ferdinand-Braun-Institut, Berlin, Germany
Elison Matioli, EPFL, Switzerland
Yoshinao Miura, AIST, Japan
Hiroyuki Handa, Panasonic, Japan
Niels Posthuma, IMEC, Belgium
Dong Seuo Lee, TI, USA
Grace Xing, Cornell University, USA
Na Ren, Zhejiang University, China
Roy K.-Y. Wong, National Tsing Hua University, Taiwan
Hong Zhou, Xidian University, China
Yasuhiro Uemoto, Infineon Technologies Japan, Japan

SiC and Other Materials (SiC)

Yuichi Onozawa, Fuji Electric, Japan – Subcommittee Chair

Edward Van Brunt, Wolfspeed, USA
Song Bai, Nanjing Electronic Device Institute, China
Alexander Bolotnikov, ON Semiconductor, USA
Ulrike Grossner, ETH, Switzerland
Hiroshi Kono, Toshiba Electronic Devices & Storage Corporation, Japan
Naruhisa Miura, Mitsubishi Electric Corporation, Japan
Dethard Peters, Infineon Technologies, Germany
Pete Losee, Qorvo, USA
Woongje Sung, SUNY Polytechnic Institute, USA
Shinsuke Harada, AIST, Japan
Chih-Fang Huang, National Tsing Hua University, Taiwan
Michele Riccio, University of Naples, Italy
Cheng-Tyng Yen, Fast SiC Semiconductor Inc., Taiwan

Module and Package Technologies (PK)

Stefan Oehling, Semikron-Danfoss, Germany – Subcommittee Chair

Yang Xu, Tesla, USA
Wei-Chung Lo, Industrial Technology Research Institute, Taiwan
Xavier Jorda, IMB-CNM, Spain
Emre Gurpinar, Sikorsky Innovations, USA
Ichiro Omura, Kyushu Institute of Technology, Japan
Haruka Shimizu, Hitachi Power Device, Japan