The Development of SiC Power MOSFET: Structure Design and Fabrication Technology
SiC MOSFET has been gradually used in many applications, such as electrics vehicles, photovoltaic inverter owing to its superior performance in terms of conduction loss and switching speed. Over 20-years development of SiC MOSFETs, various device structures have been proposed and fabricated to reduce the on-state resistance while alleviating the electric field stress on the gate oxide. On the other hand, the fabrication technology is continuously improving to reduce the defects produced during the manufacturing process. This talk provides a tutorial of the device structure design and fabrication technology for SiC MOSFETs. Structures including planar gate, trench gate and super junction will be covered while the processing technologies, such as gate oxide formation, trench etching and super junction formation will be discussed. Through above analysis, the trend of SiC MOSFET development will be discussed.
Sheng Kuang
Prof Sheng Kuang is currently a Distinguished Professor with Zhejiang University and the dean of the College of Electrical Engineering. His research interests include all aspects of power semiconductor devices and ICs. He has published over 300 journal and conference papers. He also holds over 50 granted patents. He was general chair of the 31st IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD). He is currently the advisory committee member of IEEE ISPSD. He also serves as the associate editor of IEEE Transactions on Electron Device and IEEE Transactions of Power Electronics.
