Short Course Program

Date: 2 June 2024 (Sunday)

09:00–09:10
Welcome

09:10–10:00
Fundamentals of SiC Power Devices – Performance and Reliability
Prof Tsunenobu Kimoto, Kyoto University, Japan

10:00–10:50
Technology for Building Power IC in Gallium Nitride
Prof Kevin J. Chen, Hong Kong University of Science and Technology, Hong Kong

10:50–11:20
Coffee Break

11:20–12:10
SiC technology – current trends, performance and challenges
Dr Andrei Mihaila, Starpower, Switzerland

12:10–13:40
Lunch

13:40–14:30
Towards Circular Economy Compatible Power Electronics
Prof Johann Kolar and Dr Jonas Huber, ETH Zurich, Switzerland

14:30–15:20
The Development of SiC Power MOSFET: Structure Design and Fabrication Technology
Prof Kuang Sheng, Zhejiang University, China

15:20–15:50
Coffee Break

15:50–16:40
Gate driver topologies, concepts and challenges for Wide BandGap devices
Dr Nicolas Rouger, University of Toulouse, France

16:40–17:30
Multidimensional Power Devices in WBG and UWBG Semiconductors
Prof Yuhao Zhang, Virginia Polytechnic Institute and State University, USA

17:30
End